npn BD239 ? a ? b ? c 22/10/2012 comset semiconductors 1/3 m m e e d d i i u u m m p p o o w w e e r r l l i i n n e e a a r r a a n n d d s s w w i i t t c c h h i i n n g g a a p p p p l l i i c c a a t t i i o o n n s s . . the BD239, a, b, c are mounted in jedec to-220 plastic package. they are the silicon epitaxial-base power trans istors for use in medium power linear and switching applications. the pnp complements are bd240, a, b, c. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage BD239 45 v BD239a 60 BD239b 80 BD239c 100 v cer collector-emitter voltage (r be = 100 ? ) BD239 55 v BD239a 70 BD239b 90 BD239c 115 v cbo collector-base voltage BD239 45 v BD239a 60 BD239b 80 BD239c 100 v ebo emitter-base voltage 5.0 v i c collector current i c 3 a i cm 7 i b base current 0.5 a p t power dissipation @ t amb = 25 c 30 w @ t case = 25 c 30 w t j junction temperature 150 c t s storage temperature -65 to +150 thermal characteristics symbol ratings value unit r thj-amb thermal resistance, junction-ambient 70 c/w r thj-case thermal resistance, junction-case 4.17 c/w
npn BD239 ? a ? b ? c 22/10/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ceo collector cutoff current v ce =30 v BD239 - - 0.3 ma v ce =30 v BD239a - - v ce =60 v BD239b - - v ce =60 v BD239c - - i ebo emitter cutoff current v be =5 v BD239 - - 1.0 ma BD239a - - BD239b - - BD239c - - i ces collector cutoff current (v be = 0) v ce =45 v BD239 - - 0.2 ma v ce =60 v BD239a - - v ce =80 v BD239b - - v ce =100 v BD239c - - v ceo(sus) collector-emitter sustaining voltage (i b = 0) (*) i c =30ma BD239 45 v BD239a 60 BD239b 80 BD239c 100 h fe dc current gain (*) v ce =4 v i c =0.2 a BD239 40 - - - BD239a BD239b BD239c v ce =4 v i c =1 a BD239 15 - - BD239a BD239b BD239c v ce(sat) collector-emitter saturation voltage (*) i c =1 a i b =200 ma BD239 - - 0.6 v BD239a BD239b BD239c v be(on) base-emitter voltage (*) v ce =4 v i c =1 a BD239 - - 1.3 v BD239a BD239b BD239c h fe small signal current gain v ce =10 v i c =0.2 a f = 1khz BD239 20 - - BD239a BD239b BD239c v ce =10 v i c =0.2 a f = 1mhz BD239 3 - - - BD239a BD239b BD239c f t transistor frequency v ce =10 v, i c =0.2 a, f = 1mhz 3 - - mhz (*) pulse width 300 s, duty cycle 2.0%
npn BD239 ? a ? b ? c 22/10/2012 comset semiconductors 3/3 mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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